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中红外LED使用注意事项

1. IR LED is a specific product, which require care. IR LEDs are fabricated from narrow band A3B5 heterostructures with energy gap from 0.25 to 0.4 eV. That's why direct bias used to initiate current flow is low compared to the well known visible or NIR LEDs. Typical forward bias is U~0.1- 1 V only for mid-IR LEDs!

IR LED 是一种特殊的产品,需要特别小心。IR LED是用A3B5族窄带能级带宽0.25-0.4eV的异质结材料制造。所以直接偏压启动的电流比可见、近红外LED小。中红外LED前置电压通常为0.1-1V

2. Be sure not to exceed I*max which is given in each LED specification and do not use test instrument that contain sources/batteries with voltage greater that Ucw max given in specification. For LED current restriction and further LED current measurement we recommend to use resistor (1-5 Ohms) connected in serial to LED. This is important to note that not grounded devices (e.g. computer) can give U=1-5 V that is enough to destroy the LED!

3. It is highly desirable that the user has I-U meter for small currents (10-100 E-6 A). We guarantee the existence of the LED output as long as U-I characteristic shows saturation in the reverse bias (10-100 E-6 A).

4. We recommend activating pulse generator prior connecting LED to generator. On switching off the procedure is vice versa: disconnect LED, switch off pulse generator. Long wires connecting LED with pulse generator may be the reason for LED failure because of unexpected voltage sparks when switching on and off the LED supply.

5. Please test all elements and circuits before applying voltage to LED. Remember that ground (T0-18 or another holder) should be biased positively (if not specially designed). the LED. Usually the negative electrode is made shorter than the positive one.

6. The expected signal is not very big and it is important to test and eliminate noise in the detector circuits.

7. In some cases it is possible to increase pulse duration. Imax in such cases can be estimated using the following equation: Imax=I* max /20*SQRT(f*t), where f-is the frequency (Hz), t-is the pulse duration (s), I* max-is the maximum current (A) for t=5 us and f=500 Hz. The equation gives an order of magnitude and may be used for t< 0.1 ms only. Pulses with t > 0.15 ms should be considered as adequate to CW operation and Imax and Umax should be taken close to CW operation parameters. Please, note that long pulses can increase heat dissipation and the chip temperature. This effect decreases LED emission power and can be traced due to the LED resistance decrease during each pulse. CW power often decreases with time due to heatsink temperature increase.

8. Microimmersion LEDs are made with chalcogenide glass that have low melting temperature (50-70oC). That's why, please, avoid any heaters close to the LED. Even sunlight concentrated onto lens can melt glass lens. That's why we recommend vertical position for the LEDs at the initial stage of the research work. We are working now to increase the glass melting temperature or/and to strengthen it's position and shape. Future devices will be free of the above disadvantage.

9. Be patient in adjusting the optical system. It is only experience that helps to work fast.

DAPD 光电倍增管与其它光电倍增管技术对比

固态光电倍增管是近年发展较快的一种弱光探测器,在许多领域已经逐渐取代传统的真空型光电倍增管。这种固态光电倍增管又称为Si光电倍增管。通常分为两种技术:

1,基于盖格模式的雪崩二极管:每一个APD相当于一个微型光电池,采用独特的沟槽技术将这些微电池(APD)单元进行光学隔离,所有的微电池(APD)单元的电流输出被并联起来,输出信号集成了所有APD电池的响应信号。

2,多道分离放大光子探测技术,即Multichannel Discrete Amplification Photon Detector (DAPD)。是最新发展的一种微弱光探测技术。


未完待续。。。



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