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  點擊該按紐隱藏左邊的頁面菜單以便擴大工作區域的面積

中紅外LED使用注意事項

1. IR LED is a specific product, which require care. IR LEDs are fabricated from narrow band A3B5 heterostructures with energy gap from 0.25 to 0.4 eV. That's why direct bias used to initiate current flow is low compared to the well known visible or NIR LEDs. Typical forward bias is U~0.1- 1 V only for mid-IR LEDs!

IR LED 是一種特殊的產品,需要特別小心。IR LED是用A3B5族窄帶能級帶寬0.25-0.4eV的異質結材料制造。所以直接偏壓啟動的電流比可見、近紅外LED小。中紅外LED前置電壓通常為0.1-1V

2. Be sure not to exceed I*max which is given in each LED specification and do not use test instrument that contain sources/batteries with voltage greater that Ucw max given in specification. For LED current restriction and further LED current measurement we recommend to use resistor (1-5 Ohms) connected in serial to LED. This is important to note that not grounded devices (e.g. computer) can give U=1-5 V that is enough to destroy the LED!

3. It is highly desirable that the user has I-U meter for small currents (10-100 E-6 A). We guarantee the existence of the LED output as long as U-I characteristic shows saturation in the reverse bias (10-100 E-6 A).

4. We recommend activating pulse generator prior connecting LED to generator. On switching off the procedure is vice versa: disconnect LED, switch off pulse generator. Long wires connecting LED with pulse generator may be the reason for LED failure because of unexpected voltage sparks when switching on and off the LED supply.

5. Please test all elements and circuits before applying voltage to LED. Remember that ground (T0-18 or another holder) should be biased positively (if not specially designed). the LED. Usually the negative electrode is made shorter than the positive one.

6. The expected signal is not very big and it is important to test and eliminate noise in the detector circuits.

7. In some cases it is possible to increase pulse duration. Imax in such cases can be estimated using the following equation: Imax=I* max /20*SQRT(f*t), where f-is the frequency (Hz), t-is the pulse duration (s), I* max-is the maximum current (A) for t=5 us and f=500 Hz. The equation gives an order of magnitude and may be used for t< 0.1 ms only. Pulses with t > 0.15 ms should be considered as adequate to CW operation and Imax and Umax should be taken close to CW operation parameters. Please, note that long pulses can increase heat dissipation and the chip temperature. This effect decreases LED emission power and can be traced due to the LED resistance decrease during each pulse. CW power often decreases with time due to heatsink temperature increase.

8. Microimmersion LEDs are made with chalcogenide glass that have low melting temperature (50-70oC). That's why, please, avoid any heaters close to the LED. Even sunlight concentrated onto lens can melt glass lens. That's why we recommend vertical position for the LEDs at the initial stage of the research work. We are working now to increase the glass melting temperature or/and to strengthen it's position and shape. Future devices will be free of the above disadvantage.

9. Be patient in adjusting the optical system. It is only experience that helps to work fast.

DAPD 光電倍增管與其它光電倍增管技術對比

固態光電倍增管是近年發展較快的一種弱光探測器,在許多領域已經逐漸取代傳統的真空型光電倍增管。這種固態光電倍增管又稱為Si光電倍增管。通常分為兩種技術:

1,基于蓋格模式的雪崩二極管:每一個APD相當于一個微型光電池,采用獨特的溝槽技術將這些微電池(APD)單元進行光學隔離,所有的微電池(APD)單元的電流輸出被并聯起來,輸出信號集成了所有APD電池的響應信號。

2,多道分離放大光子探測技術,即Multichannel Discrete Amplification Photon Detector (DAPD)。是最新發展的一種微弱光探測技術。


未完待續。。。



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